GaN vs. Si for Class D Audio Applications

Author

Jordan Michael Sangid, University of TennesseeFollow

Date of Award

12-2018

Degree Type

Thesis

Degree Name

Master of Science

Major

Electrical Engineering

Major Professor

Benjamin J. Blalock

Committee Members

Daniel Costinett, Leon M. Tolbert

Abstract

The demands and applications of modern power electronics are quickly moving past the maximum performance capabilities of Silicon devices. As the processing of Wide Bandgap (WBG) materials matures and the commercial availability of WBG devices grows, circuit designers are exploring many applications to exploit the performance benefits over traditional Silicon devices. This work examines the under-explored application of GaN-based Class D audio by providing a side-by-side comparison of enhancement-mode GaN devices with currently available Silicon MOSFETs. It is suggested that GaN in Class D audio will allow for lower heat radiation, smaller circuit footprints, and longer battery life as compared to Si MOSFETs with a negligible trade-off for quality of sound.

Recommended Citation

Sangid, Jordan Michael, "GaN vs. Si for Class D Audio Applications. " Master's Thesis, University of Tennessee, 2018.
https://trace.tennessee.edu/utk_gradthes/5357