The effects of gamma radiation on semiconductor devices for high temperature electronics

Author

Herbert P. Orrick

Date of Award

12-1981

Degree Type

Thesis

Degree Name

Master of Science

Major

Electrical Engineering

Major Professor

Eldredge J. Kennedy

Committee Members

T. V. Blalock, J. W. Waller

Abstract

Several semiconductor devices (bipolar transistors, JFETs, MOS transistors, and IC operational amplifiers), capacitors, and thick-film resistors were irradiated at 1.3 x 10⁵ rads/hour for total gamma doses up to 2 x 10⁷ rads. Evaluations were made during and following irradiation. Devices were then annealed at 230°C for an equivalent time period to simulate real time annealing effects on radiation damage in a high temperature environment.

Recommended Citation

Orrick, Herbert P., "The effects of gamma radiation on semiconductor devices for high temperature electronics. " Master's Thesis, University of Tennessee, 1981.
https://trace.tennessee.edu/utk_gradthes/15268