The effects of gamma and neutron irradiations on linear integrated circuits and power devices

Author

David K. Su

Date of Award

3-1985

Degree Type

Thesis

Major

Electrical Engineering

Major Professor

Eldridge J. Kennedy

Committee Members

T. V. Blalock, J. M. Rochelle

Abstract

A variety of linear integrated circuits and power devices were irradiated with gamma rays and neutrons to determine total dose effects. Several operational amplifiers, voltage comparators, buffers, voltage references, power bipolar transistors, voltage rectifiers, transistor arrays, and monolithic breadboard components were identified with radiation hardness exceeding one megarad and 5X10¹³n/cm². The linear integrated circuits and power devices tested were separated into four categories depending on their radiation tolerance. The changes in the electrical parameters of the devies were examined. In general, the bipolar devices demonstrated greater radiation hardness than devices utilizing either JFET, MOS, or CMOS circuitry.

Recommended Citation

Su, David K., "The effects of gamma and neutron irradiations on linear integrated circuits and power devices. " Master's Thesis, University of Tennessee, 1985.
https://trace.tennessee.edu/utk_gradthes/14448