Study of charge emission from Si and Ge irradiated by a KrF excimer laser

Author

Miroslaw M. Bialkowski

Date of Award

5-1989

Degree Type

Thesis

Degree Name

Master of Science

Major

Physics

Major Professor

Thomas A. Callcott

Committee Members

G. Samuel Hurst, Douglas H. Lowndes, James E. Parks, Vasilios Alexiades

Abstract

We described an experiment that was a part of the development of an improved method for counting noble gas atoms (the RISTRON project). Its main purpose was to investigate the charge emission from Si and Ge surfaces under KrF excimer laser irradiation. We proved that this charge should not interfere with functioning of the ion optics associated with the RISTRON, which requires the combination of RIS with a mass selector. Experimental data were presented in a form of emission signals and compared to the results of theoretical calculations based on a simple mathematical model. We observed unexpected differences between emission signals from Si and Ge. The significance of this discovery justifies continued experimental and theoretical work on the annealing of semiconducting materials.

Recommended Citation

Bialkowski, Miroslaw M., "Study of charge emission from Si and Ge irradiated by a KrF excimer laser. " Master's Thesis, University of Tennessee, 1989.
https://trace.tennessee.edu/utk_gradthes/12894