Evaluation of four state-of-the-art power semiconductor devices

Author

Seyed Yahya Sotoudeh

Date of Award

5-1990

Degree Type

Thesis

Degree Name

Master of Science

Major

Electrical Engineering

Major Professor

B . K. Rose

Committee Members

F. Symonds, J.S. Lawler

Abstract

Power semiconductor devices are the most important elements in the design of power electronics circuits. Chapters 2, 3, 4, and 5 of this thesis aim to discuss structures and characteristics of four state-of-the-art power semiconductor devices, i.e., Insulated Gate Bipolar Transistor (IGBT), Static Induction Transistor (SIT), Static Induction Thyristor (SITH), and MOS-Controlled Thyristor (MCT). A one-quadrant chopper circuit with a suitable gate drive circuit is designed for a sample of each one of these devices. The design procedures and the test results are presented at the end of the corresponding chapters. The device test is based on the availability of the sample and limitations of laboratory test equipment. Test results prove the devices' data sheets provide accurate information about static and dynamic characteristics of the devices.

Recommended Citation

Sotoudeh, Seyed Yahya, "Evaluation of four state-of-the-art power semiconductor devices. " Master's Thesis, University of Tennessee, 1990.
https://trace.tennessee.edu/utk_gradthes/12777