Design of low-level current sources for addressable electron emitter array

Author

Jason Michael Vann

Date of Award

8-1998

Degree Type

Thesis

Degree Name

Master of Science

Major

Electrical Engineering

Major Professor

James M. Rochelle

Committee Members

T. V. Blalock, M. L. Simpson

Abstract

The development of a Massively Parallel Electron Beam Lithography system has led to the design of addressable 100pA current sources. BSIM Level 13 model parameters were extracted for the HP 0.5µm CMOS process, for characterization of weakly inverted, small geometry devices implemented in the current source design. A 5 x 5 array of 100pA current sources was also constructed for a feasibility and lifetime study of Amorphous Diamond electron emitters. The current sources were fabricated in the ORBIT 1.2µm CMOS process and attained a measured output impedance of 80GΩ.

Recommended Citation

Vann, Jason Michael, "Design of low-level current sources for addressable electron emitter array. " Master's Thesis, University of Tennessee, 1998.
https://trace.tennessee.edu/utk_gradthes/10405