Ion mixing in oxide-sapphire systems

Author

Debra L. Joslin

Date of Award

5-1993

Degree Type

Dissertation

Degree Name

Doctor of Philosophy

Major

Metallurgical Engineering

Major Professor

Carl J. McHargue

Committee Members

R.A. Buchanan, D.C. Joy, T.T. Meek, C.W. White

Abstract

Ion beam mixing of thin oxide films, Cr₂O₃ and ZrO₂, on sapphire substrates has been studied. The systems were chosen according to their solubilities in α-Al₂O₃: Cr₂O₃ is completely soluble, while ZrO₂ is insoluble. Mixing experiments were performed on 50-80 nm-thick Cr₂O₂ and ZrO₂ films deposited on α-Al₂O₃ by rf sputter deposition. Experiments were also performed on 50 nm thick Zr and Cr films deposited on α-Al₂O₃by electron beam evaporation. The oxide-sapphire specimens were bombarded with Cr ions at an energies between 160 and 340 keV to fluences near 5 x 10¹⁶ ions-cm^-2. Irradiations were also performed with 475 keV Kr ions, to similar fluences. These irradiations were performed at temperatures between 20°C and 900°C. The metal-sapphire samples were irradiated at 20°C with 320 keV Kr, to similar fluences. Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and transmission electron microscopy were used to analyze samples before and after irradiation to analyze the interface modifications. No long-range mixing was found to occur in any of the systems studied.

Recommended Citation

Joslin, Debra L., "Ion mixing in oxide-sapphire systems. " PhD diss., University of Tennessee, 1993.
https://trace.tennessee.edu/utk_graddiss/10700