Growth and Properties of Boron Phosphide Films on Silicon Carbide

Author

Guoliang LiFollow

Date of Award

8-2013

Degree Type

Dissertation

Degree Name

Doctor of Philosophy

Major

Materials Science and Engineering

Major Professor

Gerd Duscher

Committee Members

Philip D. Rack, Charles S. Feigerle, Carl J. McHargue

Abstract

Boron phosphide (BP) is a promising material for the development of high-efficiency solid-state thermal neutron detectors. However, the synthesis of good-quality BP film had been an obstacle. In this work, silicon carbide (SiC) substrates with vicinal steps instead of the conventional silicon (Si) substrates are used for BP growths. A series of growth experiments are performed and good-quality epitaxial BP films are successfully obtained and for the first time fully characterized. The optimized growth conditions are established, the film growth mechanism and defect origination mechanism are interpreted after an integrated experimental and theoretical study.

Recommended Citation

Li, Guoliang, "Growth and Properties of Boron Phosphide Films on Silicon Carbide. " PhD diss., University of Tennessee, 2013.
https://trace.tennessee.edu/utk_graddiss/2449