The effects of gamma radiation on semiconductor devices for high temperature electronics

Several semiconductor devices (bipolar transistors, JFETs, MOS transistors, and IC operational amplifiers), capacitors, and thick-film resistors were irradiated at 1.3 x 10⁵ rads/hour for total gamma doses up to 2 x 10⁷ rads. Evaluations were made during and following irradiation. Devices were then annealed at 230°C for an equivalent time period to simulate real time annealing effects on radiation damage in a high temperature environment.