Design of low-level current sources for addressable electron emitter array

The development of a Massively Parallel Electron Beam Lithography system has led to the design of addressable 100pA current sources. BSIM Level 13 model parameters were extracted for the HP 0.5µm CMOS process, for characterization of weakly inverted, small geometry devices implemented in the current source design. A 5 x 5 array of 100pA current sources was also constructed for a feasibility and lifetime study of Amorphous Diamond electron emitters. The current sources were fabricated in the ORBIT 1.2µm CMOS process and attained a measured output impedance of 80GΩ.