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  5. GaN vs. Si for Class D Audio Applications
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GaN vs. Si for Class D Audio Applications

Date Issued
December 15, 2018
Author(s)
Sangid, Jordan Michael
Advisor(s)
Benjamin J. Blalock
Additional Advisor(s)
Daniel Costinett
Leon M. Tolbert
Permanent URI
https://trace.tennessee.edu/handle/20.500.14382/41590
Abstract

The demands and applications of modern power electronics are quickly moving past the maximum performance capabilities of Silicon devices. As the processing of Wide Bandgap (WBG) materials matures and the commercial availability of WBG devices grows, circuit designers are exploring many applications to exploit the performance benefits over traditional Silicon devices. This work examines the under-explored application of GaN-based Class D audio by providing a side-by-side comparison of enhancement-mode GaN devices with currently available Silicon MOSFETs. It is suggested that GaN in Class D audio will allow for lower heat radiation, smaller circuit footprints, and longer battery life as compared to Si MOSFETs with a negligible trade-off for quality of sound.

Subjects

WBG

Wide Bandgap

Audio

Audio Electronics

Class D

GaN

Degree
Master of Science
Major
Electrical Engineering
File(s)
Thumbnail Image
Name

utkirtd_663.pdf

Size

26.34 MB

Format

Adobe PDF

Checksum (MD5)

43f59672deecfbe53c23deba046ab3a0


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