Repository logo
Log In(current)
  1. Home
  2. Colleges & Schools
  3. Graduate School
  4. Doctoral Dissertations
  5. Characterizing the mechanical behavior of single and polycrystalline silicon carbide using nanoindentation.
Details

Characterizing the mechanical behavior of single and polycrystalline silicon carbide using nanoindentation.

Date Issued
December 1, 2014
Author(s)
Datye, Amit  
Advisor(s)
George M. Pharr
Additional Advisor(s)
Yanfei Gao, Carl J. Mchargue, Madhu S. Madhukar
Abstract

This research aims at enhancing the fundamental understanding of mechanisms controlling the deformation and fracture of silicon carbide based ceramics (single- and poly-crystal). The role of microstructure and material properties on the energy absorption capability of SiC is studied. This research helps to improve the ability to quantitatively predict the initiation and propagation of fracture and the interaction between fracture and plasticity, which provides a step towards a mechanistic understanding of deformation and failure properties of ceramic single crystals and polycrystals. The validity of the indentation-cracking method for toughness measurement is examined using nanoindentation tests with different indenters (spherical, pyramidal). Pyramidal indenters with various centerline to face angles are used to produce a wide range of effective strains in the single and polycrystalline SiC. Crystal plasticity constitutive laws can be calibrated using below threshold indentation loads. Above threshold loads are used to construct a parametric map that delineates the dependence of the ratio of crack size and contact radius on indenter geometry, applied load, toughness, and hardness, thus providing important guidelines for the toughness measurement method. By examining the behavior of several SiC materials during nanoindentation experiments using spherical and pyramidal indenters, it is possible to make predictions about methods to improve the ductility and fracture toughness of SiC to optimize its energy absorption. The applicability of the area under the irreversible part of the indentation load displacement curve (energy dissipated during loading) to predict the performance of SiC under contact loading is examined.

Disciplines
Ceramic Materials
Degree
Doctor of Philosophy
Major
Materials Science and Engineering
Embargo Date
January 1, 2011
File(s)
Thumbnail Image
Name

PhD_Disseration_V18.docx

Size

24.33 MB

Format

Microsoft Word XML

Checksum (MD5)

6cf0d32eaf2aef59bd881b3cf0f4967f

Thumbnail Image
Name

PhD_Disseration_V34.pdf

Size

6.09 MB

Format

Adobe PDF

Checksum (MD5)

29929f5054c41fe81848f2f7c0cf4446

Learn more about how TRACE supports reserach impact and open access here.

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Privacy policy
  • End User Agreement
  • Send Feedback
  • Contact
  • Libraries at University of Tennessee, Knoxville
Repository logo COAR Notify