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  5. Low Temperature Thermally Activated CVD of Silicon on Molybdenum for Oxidation Protection
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Low Temperature Thermally Activated CVD of Silicon on Molybdenum for Oxidation Protection

Date Issued
August 1, 2014
Author(s)
Jolly, Brian C.  
Advisor(s)
George M. Pharr
Additional Advisor(s)
Thomas R. Watkins, Theodore M. Besmann
Abstract

The United States Global Threat Reeducation Initiative (GTRI) is promoting the production of molybdenum-99 without the use of uranium-235. One possible route, called neutron capture technology, is through the activation of molybdenum-98 via irradiation. GE-Hitachi has identified a location within their boiling water reactors for molybdenum-98 irradiation, but the elevated temperatures present risk oxidizing the molybdenum. This work explored using a silicon coating to protect the molybdenum from oxidation. With silane gas as the precursor, chemical vapor deposition was employed to produce the silicon coating. Characterization was performed and showed a discrete silicon layer was deposited with little to no inter-diffusion occurring between the coating and the substrate. Oxidation performance was evaluated, and excellent results were observed with the silicon coated specimen having weight gain 3 orders of magnitude less than that of the bare molybdenum.

Subjects

CVD

chemical vapor deposi...

silicon

molybdenum

oxidation protection

technetium

Disciplines
Other Materials Science and Engineering
Degree
Master of Science
Major
Materials Science and Engineering
Embargo Date
January 1, 2011
File(s)
Thumbnail Image
Name

Jolly_thesis.docx

Size

5.26 MB

Format

Microsoft Word XML

Checksum (MD5)

4326d84d86872f5318dc23a1ec349822

Thumbnail Image
Name

auto_convert.pdf

Size

12.74 MB

Format

Adobe PDF

Checksum (MD5)

488f1becf2db1cd9e183170723bdca35

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