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  6. Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor
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Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor

Date Issued
January 1, 2019
Author(s)
Hao, Lin
Wang, Zhentao
Yang, Junyi
Meyers, D.
Sanchez, Joshua
Fabbris, Gilberto
Cho, Yongseong
Kim, Jong-Woo
Haskel, Daniel
Ryan, Philip J.
Barros, Kipton
Chu, Jiun-Haw
Dean, M.P.M.
Batista, Cristian D.
Liu, Jian  
DOI
DOIhttps://doi.org/10.1038/s41467-019-13271-6
Permanent URI
https://trace.tennessee.edu/handle/20.500.14382/50439
Abstract

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.

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Anomalous.pdf

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Checksum (MD5)

6c8cd05d48aff9cb330198d8a25d3929

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